型 号：VistecEBPG5000+

功 能：

• 各种光学光刻模板的制备
  Fabrication of versatilephotomasks 

• 各种碎片、50 mm及100 mm基片微纳米图案的直写，最小线宽<10 nm
  Direct write of micro- andnanopatterns on 50 mm, 100 mm and pieces
  wafers with minimum line width smaller than 10 nm

主要指标：

• 图形发生器频率(Pattern generator frequency)：25 MHz 
• 束斑位置稳定性(Beam position stability)：< 50 nm/h
• 束流稳定性(Current stability)：<±0.5%/h
• 主场稳定性(Main field stability)：< 40 nm (for 400μmmain fieldwithin0.5 h)
• 场畸变(In field distortion)：<±15 nm(for400μmmain field)
• 分辨率(Resolution)：< 8 nmline width(@100kV)
  <±3 nm(for <10nm lines with in 100μmfields@100kV) 
  <±3 nm(for <15nm lines with in 250μm fields@100kV)
• 场拼接精度(Stitching accuracy)：　±15nm(for 100μmmain field@100kV)
  ±20nm (for 250μmmain field@100kV) 
  ±25nm (for 400μmmain field@100kV)
• 套刻精度(Overlay accuracy)：　　　±15nm(for 100μmmain field@100kV)
   ±20nm (for 250μmmain field@100kV)
   ±25nm (for 400μmmain field@100kV)
• 直写精度(Direct write accuracy)：　±15nm(for 100μmmain field@100kV)
   ±20nm (for 250μmmain field@100kV)
  ±25nm (for 400μmmain field@100kV)

 

技术特点：

• 高曝光速度和稳定性，可大面积曝光
  Large areas to be patterned with highspeed and good stability
• 高分辨率
  High resolution