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分辨率(Resolution):≤ 1.0 nm @ 15 kV; ≤ 1.6 nm @ 1.0 kV
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观察范围(Viewfield):100 mm ×100 mm
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样品台倾角(Tilting angles):-5° ~ + 70°
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配备能谱仪(EDS):超大面积电制冷硅飘逸探测器 (Si drift detector with 80 mm2 super ATW window electrically cooled )
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能谱分辨率(Energy resolution):≦129 eV(MnKα, 40000 cps)